• All
  • Plasma etching equipment
  • Dry microplasma equipment
  • Metal plasma equipment/Equation plasma equipment
  • Surface modification/Surface cleaning/Roughening

Plasma etching equipment

Product Description

  • Plasma dry etching equipment
  • Surface modification, roughening, cleaning, deep hole etching
  • Etching material:PP, PR, Dry Film, Epoxy,…(All kinds of polymeric substance)
  • substrate:Wafer, Si, Glass, PP, PMMA,Cu…(All kinds of substrate)

Equipment characteristic

  • In-line continuous-type design
  • High aspect ratio etching direction, high ion energy
  • Special structural design reduction electric arc,Increase plasma stability
  • High Capacity、Low revolution cost
  • Not special gas demand
  • Modulized design,Customization
  • Substrate size:21” x 24”

Product application category


Dry microplasma equipment

Product Description

  • Plasma dry etching(Desmear,Descum)
  • Surface modification, roughening
  • Etching material:PP,PMMA,ABF,Epoxy,…(All kinds of polymeric substance)
  • substrate:Wafer, Si, Glass, PP, PMMA,Cu…(All kinds of substrate)

Equipment characteristic

  • Multi-piece design
  • High Capacity、Low revolution cost
  • Chemica Reactive Ion Etching
  • Not special gas demand
  • Modulized design,Customization
  • Substrate size:21” x 24”

Product application category


Metal plasma equipment/Equation plasma equipment

Product Description

  • Plasma dry etching
  • Etching material: Cu, Ti, Ta, Si, SiO2,Pd…(All kinds of metal)
  • Etching material:PP,PR,PMMA,ABF,Epoxy…(All kinds of polymeric substance)
  • substrate: Wafer, Si, Glass, PP, PMMA, Cu…(All kinds of substrate)

Equipment characteristic

  • High-speed dry etching process
  • High cooling capacity,Low substrate deformation
  • High aspect ratio etching direction(low side etching)
  • High Capacity、Low revolution cost
  • Modulized design,Customization
  • Substrate size:4”, 6”, 8”,16” x 20”, 20” x 24”

Product application category


Surface modification/Surface cleaning/Roughening

產品說明

  • Plasma dry etching
  • Etching material: Cu, Ti, Ta, Si, SiO2,Pd…(All kinds of metal)
  • Etching material:PP,PR,PMMA,ABF,Epoxy…(All kinds of polymeric substance)
  • substrate: Wafer, Si, Glass, PP, PMMA, Cu…(All kinds of substrate)

Equipment characteristic

  • High-speed dry etching process
  • High cooling capacity,Low substrate deformation
  • High aspect ratio etching direction(low side etching)
  • High Capacity、Low revolution cost
  • Modulized design,Customization
  • Substrate size:4”, 6”, 8”,16” x 20”, 20” x 24”

Product application category